Optical spectra of wide band gap Be x Zn 1− x Se alloys
We report optical measurements (photoluminescence, Raman scattering, and infrared reflectance) of direct band gap and of optical phonon energies of BexZn1−xSe alloys grown by MBE on (001) GaAs substrates for a wide range of Be concentrations. The high band gap of BeSe (5.15 eV) suggests the possibility of using isoternary alloys for ultraviolet optoelectronic applications. BexZn1−xSe has the unique advantage that it can be lattice matched to Si at about x=0.5. We observed a strong linear shift of the BexZn1−xSe direct band gap to higher energies with increasing Be content (to 3.63 eV for x=0.34). Furthermore, optical phonon parameters for the entire range of BeSe content have been obtained. Finally, polarized infrared and Raman spectra revealed local atomic ordering (anti-clustering) effects in the group-II sublattice.
Peiris, Frank; Mintairov, A. M.; Raymond, S.; Merz, J. L.; Lee, S.; Bindley, U.; Furdyna, J. K.; Melehin, V. G.; and Sadchikov, K., "Optical spectra of wide band gap Be x Zn 1− x Se alloys" (1999). Semiconductors 33(9): 1021-1023. Faculty Publications. Paper 230.