Characterization of MBE-grown II–VI semiconductor distributed Bragg reflectors
We have grown distributed Bragg reflectors (DBRs) using two different combinations of II–VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSe/ZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system.
Peiris, Frank; Lee, S.; Bindley, U.; Furdyna, J. K.; Stuckey, A. M.; Martin, M. R.; and Buschert, J. R., "Characterization of MBE-grown II–VI semiconductor distributed Bragg reflectors" (1999). Journal of Crystal Growth 201-202. Faculty Publications. Paper 225.
Journal of Crystal Growth