Growth and characterization of digital alloy quantum wells of CdSe/ZnSe
We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of various numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical properties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties will be discussed. Such digital alloy quantum wells are shown to have excellent room temperature optical characteristics.
Peiris, Frank and al., et, "Growth and characterization of digital alloy quantum wells of CdSe/ZnSe" (1993). Journal of Electronic Materials 22(5): 467-471. Faculty Publications. Paper 221.
Journal of Electronic Materials