Title

Visible-near ultraviolet ellipsometric study of Zn1-xMgxSe and Zn1-xBexSe alloys

Document Type

Article

Publication Date

6-2000

Abstract

We report pseudodielectric function data 〈ε〉=〈ε1〉+i〈ε2〉" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">⟨ε⟩=⟨ε1⟩+i⟨ε2⟩〈ε〉=〈ε1〉+i〈ε2〉 of Zn1−xMgxSe" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">Zn1−xMgxSeZn1−xMgxSe and Zn1−xBexSe" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">Zn1−xBexSeZn1−xBexSe samples grown on GaAs substrates. The data were obtained from 1.5 to 6.0 eV using spectroscopic ellipsometry. Critical point parameters were obtained by fitting model line shapes to numerically calculated second energy derivatives of 〈ε〉," role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">⟨ε⟩,〈ε〉, from which the bowing parameters and spin-orbit-splitting Δ1" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">Δ1Δ1 of the E1" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">E1E1 and E1+Δ1" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">E1+Δ1E1+Δ1 gaps were obtained. A transfer of oscillator strength from E1+Δ1" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">E1+Δ1E1+Δ1 to E1" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">E1E1 with increasing Mg and Be composition and a positive bowing of these threshold energies are attributed to the k-linear interaction, which is large in small-band gap semiconductors.

Journal

Journal of Applied Physics

Volume

88

Issue

2