Title

ZnMgSe/ZnCdSe and ZnMgSe/ZnSeTe distributed Bragg reflectors grown by molecular beam epitaxy

Document Type

Article

Publication Date

6-1999

Abstract

This article investigates distributed Bragg reflectors (DBRs) based on two wide-gap II–VI semiconductor alloy combinations: ZnMgSe/ZnCdSe and ZnMgSe/ZnSeTe. Prior to fabrication of the DBRs, a prism coupler technique was used to determine the indices of refraction n of the above ternary alloys of various compositions prepared by molecular beam epitaxy (MBE). Using these values of n, two DBR systems, Zn0.66Mg0.34Se/Zn0.74Cd0.20Se" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">Zn0.66Mg0.34Se/Zn0.74Cd0.20SeZn0.66Mg0.34Se/Zn0.74Cd0.20Se and Zn0.62Mg0.38Se/ZnSe0.56Te0.44," role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">Zn0.62Mg0.38Se/ZnSe0.56Te0.44,Zn0.62Mg0.38Se/ZnSe0.56Te0.44, were fabricated, each with a relatively large difference in the indices of refraction between its layer materials. It was found that although a higher reflectivity could be achieved using the ZnMgSe/ZnSeTe combination (since it manifests a larger difference in their indices of refraction Δn=0.35)," role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">Δn=0.35),Δn=0.35), the number of periods which can be deposited in this DBR system is limited due to growth difficulties that arise when combining ZnMgSe and ZnSeTe. Therefore the ZnMgSe/ZnSeTe DBR system, which was restricted to just 10 periods, yielded a modest reflectivity of 85%. On the other hand, although Δn" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">ΔnΔn in the ZnMgSe/ZnCdSe DBR system is smaller (Δn=0.20)," role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">(Δn=0.20),(Δn=0.20), it poses fewer growth difficulties, making it possible to grow DBR stacks consisting of a large number of layers without compromising the crystal quality of the structure. By growing 20 periods of the ZnMgSe/ZnCdSe DBR system, we obtained a DBR with a reflectivity as high as 98%.

Journal

Journal of Applied Physics

Volume

86

Issue

719