Optical properties of CdSexTe1−x epitaxial films studied by spectroscopic ellipsometry
We have determined the dielectric constants for a series of CdSexTe1−x thin films grown on Si substrates using a rotating-analyzer spectroscopic ellipsometer. Initially, the alloy concentration and the sample quality were determined using x-ray diffraction. A standard inversion technique was then used to obtain the dielectric constants from the measured ellipsometric spectra. Using these calculated absorption spectra, we were able to estimate the fundamental bandgap for these CdSexTe1−x alloys. In addition, we also determined the dispersion of the indices of refraction as well as the critical points related to the higher-order electronic transitions for this alloy.
Peiris, F.C., Weber, Z.J., Chen, Y. et al. Journal of Elec Materi (2004) 33: 724. doi:10.1007/s11664-004-0073-2.
Journal of Electronic Materials